Perovskite oxide thin film EL element
US8193704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2009 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Feb 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There are provided a perovskite oxide thin film EL element in which a hole transport layer/a light-emitting layer/an electron transport layer comprising a perovskite oxide thin film are formed on a lower electrode, and an upper electrode is formed thereon, and a perovskite oxide thin film EL element that provides red light emission in the vicinity of a wavelength of 610 nm, which is the basis of display making. A perovskite oxide thin film EL element comprising a lower electrode 1 comprising a polished single crystal substrate, an electron transport layer 2 comprising a perovskite oxide thin film, which is a dielectric, formed on the lower electrode 1, a light-emitting layer 3 comprising a perovskite oxide thin film formed on the electron transport layer 2, a hole transport layer 4 comprising a perovskite oxide thin film, which is a dielectric, formed on the light-emitting layer 3, a buffer layer 5 formed on the hole transport layer 4, and a transparent upper electrode 6 formed on the buffer layer 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.