TMR read head structures with differential stripe heights
US8194366B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2009 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Sep 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetoresistance (TMR) read head and a method of producing the same are disclosed. A free layer having a free layer stripe height is provided, the free layer having a first side and a second side. A tunneling barrier layer is formed adjacent to the first side of the free layer, the tunneling barrier layer having a first side and a second side, the second side of the tunneling barrier layer facing the first side of the free layer. A pinned stack is formed adjacent to the first side of the tunneling barrier layer. The pinned stack comprises at least one magnetic layer having a current path stripe height that is less than the free layer stripe height.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.