Inrush current control system with soft start circuit and method
US8194379B2 · kind B2 · utility
8Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2010 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Mar 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0822
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of and system for controlling the inrush current generated in a MOSFET of an inrush current control system, wherein the MOSFET includes a source, gate and drain. The dV/dt at the drain of the MOSFET is controlled so as to set the inrush current level as a function of dV/dt, independent of current limit without requiring a separate capacitor connected between the gate and drain of the MOSFET so that the MOSFET can turn on and off more quickly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.