Flash memory device and programming method thereof
US8194463B2 · kind B2 · utility
3Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2009 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Aug 22, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming method of a flash memory device having memory cells, and a flash memory device to perform the method, including programming selected memory cells according to loaded data, sensing states of the programmed memory cells and firstly latching the sensed states, and determining whether a program-inhibited memory cell among the selected memory cells has been programmed, with reference to the loaded data and the latched states, before determining whether the selected memory cells have been properly programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.