Cointegrated MEMS sensor and method
US8196475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Jul 22, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2207/015
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Described herein is a method for integrating MEMS with submicron semiconductor electrical circuits such as CMOS to provide more complex signal processing, on-chip calibration and integration with RF technologies. A MEMS sensor is provided having an upper layer, an insulating layer into which a cavity has been formed and a handle layer. The upper layer acts as both the substrate of the semiconductor electrical circuit and as the active MEMS element. The remainder of the circuitry is fabricated either in or on the upper layer. In a preferred method of the present invention a first wafer assembly and a second wafer assembly are fabricated such that a MEMS sensor and the substrate of at least one semiconductive electrical circuit is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.