Semiconductor structure made using improved multiple ion implantation process
US8196546B1 · kind B1 · utility
0Cited by
48References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Nov 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.