Method for depositing zinc oxide at low temperatures and products formed thereby
US8197914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2005 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Aug 23, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/153
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention discloses plasma enhanced chemical vapor deposition (PECVD) process for depositing n-type and p-type zinc oxide-based transparent conducting oxides (TCOs) at low temperatures with excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers. Specifically, it discloses PECVD process for depositing n-type ZnO by doping it with B or F and p-type ZnO by doping it with nitrogen excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers for TCO application. The process utilizes a mixture of volatile zinc compound, argon and/or helium as a diluent gas, carbon dioxide as an oxidant, and a dopant or reactant to deposit the desired ZnO-based TCOs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.