Patent · US Active

Magnetic stack design

US8197953B2 · kind B2 · utility

4Cited by

10References

19Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Haiwen Xi · Prior Lake, US
Antoine Khoueir · Apple Valley, US
Brian Lee · New York, US
Pat J. Ryan · Windom, US
Michael Xuefei Tang · Bloomington, US
Insik Jin · Edina, US
Paul E. Anderson · Eden Prairie, US

Key dates

Filing date	Apr 11, 2011
Grant date	Jun 12, 2012
Priority date	—
Expiry date	Apr 11, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/1143
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.