Patent · US Active

Fabrication method for thermoelectric device

US8198116B2 · kind B2 · utility

4Cited by
7References
11Claims
0Family size

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Key dates

Filing dateDec 22, 2009
Grant dateJun 12, 2012
Priority date
Expiry dateOct 14, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N10/01

Abstract

A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a π shaped thermoelectric device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.