Fabrication method for thermoelectric device
US8198116B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 22, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Oct 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/01
Abstract
A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a π shaped thermoelectric device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.