Method of manufacturing capacitive insulating film for capacitor
US8198168B2 · kind B2 · utility
427Cited by
4References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2010 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Apr 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to the invention, a Ti film is formed on a substrate and is annealed at the temperatures of 350° C.-400° C. under oxidative environment, so that a TiO2 film having a rutile crystal structure is formed. Since the TiO2 film having a rutile crystal structure has a high dielectric constant, it is useful for a capacitive insulating film for a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.