Schottky diode switch and memory units containing the same
US8198181B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2012 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Feb 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.