Transparent nonvolatile memory thin film transistor and method of manufacturing the same
US8198625B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Jul 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.