Display device and method of fabricating the same

US8198631B2 · kind B2 · utility

Assignee

• LG Display Co., Ltd. · KR

Inventors

• Hee-Dong Choi · Seosan-si, KR
• Hye Young Choi · Anyang-si, KR
• Jun Min Lee · Daejeon, KR

Key dates

• Filing date: Jun 10, 2010
• Grant date: Jun 12, 2012
• Expiry date: Dec 10, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

Disclosed is a method of fabricating a display device that includes forming a buffer layer; forming a gate electrode of extrinsic polycrystalline silicon, a gate insulating layer, an active layer of intrinsic polycrystalline silicon and an auxiliary active layer of intrinsic amorphous silicon on the buffer layer; forming an ohmic contact layer of extrinsic amorphous silicon and contacting the auxiliary active layer, source and drain electrodes and a data line; patterning a first passivation layer, an insulating interlayer and the gate insulating layer to form a gate contact hole exposing the gate electrode; forming a gate line on the first passivation layer, made of a metal material, and contacting the gate electrode through the gate contact hole; forming a second passivation layer on the gate line; patterning the first and second passivation layers to form a drain contact hole exposing the drain electrode; and forming a pixel electrode on the second passivation layer in the pixel region and contacting the drain electrode through the drain contact hole.