Semiconductor memory device having cylinder-type capacitor lower electrode and associated methods
US8198664B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 28, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Apr 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A semiconductor memory device including a plurality of supports extending parallel to each other in a first direction on a semiconductor substrate, and capacitor lower electrode rows including a plurality of capacitor lower electrodes arranged in a line along the first direction between two adjacent supports from among the plurality of supports, each capacitor lower electrode including outside walls, wherein each of the capacitor lower electrodes includes two support contact surfaces on the outside walls of the capacitor lower electrode, the support contact surfaces respectively contacting the two adjacent supports from among the plurality of supports.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.