Semiconductor storage device and manufacturing method thereof
US8198665B2 · kind B2 · utility
2Cited by
3References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 3, 2008 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Feb 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/814
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor storage device includes: a substrate having a semiconductor layer at least on a surface thereof; and a plurality of quantum dot elements forming a charge storage layer formed above the semiconductor layer via a first insulating film that becomes a tunnel insulating film in such a manner that the quantum dot elements are connected with a bit line in series, wherein each quantum dot element forms a single electron memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.