Nonvolatile semiconductor memory device
US8198670B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Sep 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A nonvolatile semiconductor memory device includes: a multilayer body with a plurality of insulating films and electrode films alternately stacked therein; a plurality of select gate electrodes provided on the multilayer body, extending in one direction orthogonal to a stacking direction of the multilayer body, and spaced from each other; semiconductor pillars penetrating through the multilayer body and the select gate electrodes; and a charge storage film provided between one of the electrode films and one of the semiconductor pillars, two neighboring ones of the semiconductor pillars penetrating through a common one of the select gate electrodes and penetrating through mutually different positions in a width direction of the select gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.