Semiconductor device having memory element with stress insulating film
US8198691B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 15, 2011 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Mar 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
Abstract
Provided are a semiconductor device having an MTJ element capable of intentionally shifting the variation, at the time of manufacture, of a switching current of an MRAM memory element in one direction; and a manufacturing method of the device. The semiconductor device has a lower electrode having a horizontally-long rectangular planar shape; an MTJ element having a vertically-long oval planar shape formed on the right side of the lower electrode; and an MTJ's upper insulating film having a horizontally-long rectangular planar shape similar to that of the lower electrode and covering the MTJ element therewith. As the MTJ's upper insulating film, a compressive stress insulating film or a tensile stress insulating film for applying a compressive stress or a tensile stress to the MTJ element is employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.