Method for manufacturing thin film transistors
US8199269B2 · kind B2 · utility
24Cited by
5References
12Claims
0Family size
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Key dates
| Filing date | Jul 3, 2008 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Apr 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a thin film transistor including a step of forming a polymer film (a) to a layer above a support substrate, a step of forming a semiconductor element above the polymer film (a), and a step of separating the support substrate from the polymer film (a) formed with the semiconductor element in which the polymer film (a) has a thickness of 1 μm or more and 30 μm or less, a transmittance of 80% or higher to a visible light at a wavelength of 400 nm or more and 800 nm or less, a 3 wt % loss temperature of 300° C. or higher, and a melting point of 280° C. or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.