Method for solid-state single crystal growth
US8202364B2 · kind B2 · utility
1Cited by
14References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Sep 8, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.