Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
US8202365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2008 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Nov 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02422
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.