LED having vertical structure and method for fabricating the same
US8202753B2 · kind B2 · utility
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8References
24Claims
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Key dates
| Filing date | Sep 8, 2010 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Sep 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.