Patent · US Active

Terahertz radiation device using polar semiconductor materials and method of generating terahertz radiation

US8203127B2 · kind B2 · utility

0Cited by

11References

20Claims

0Family size

Assignee

The United States of America as represented by the Secretary of the Army · US

Inventors

Michael Wraback · Germantown, US
Paul H. Shen · North Potomac, US

Key dates

Filing date	Apr 4, 2011
Grant date	Jun 19, 2012
Priority date	—
Expiry date	Apr 4, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG02F2203/13
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method and device for generating terahertz radiation comprising a plurality of layers of polar crystal material operative to emit terahertz radiation; the plurality of layers comprising transport layers and divider layers, the plane of the layers being not parallel to the polar axis, the interface between the transport layers and divider layers forming boundaries at which the internal electric polarization terminates leading to charges accumulating at the boundaries, and creation of internal electric fields oriented along the polar axis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.