Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device
US8203138B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 10, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Jan 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/471
Abstract
An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.