Thin film field effect transistor

US8203143B2 · kind B2 · utility

Assignee

• FUJIFILM Corporation · JP

Inventor

• Shinji Imai · Yamakita, JP

Key dates

• Filing date: Aug 11, 2009
• Grant date: Jun 19, 2012
• Expiry date: Oct 6, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

A thin film field effect transistor has at least a gate electrode 2, a gate insulating layer 3, an active layer 4, a source electrode 5-1 and a drain electrode 5-2 on a substrate 1. The active layer includes an amorphous oxide semiconductor including at least In and Zn, a first interface layer 61 is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, and a second interface layer is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer. A content of Ga or Al in the amorphous oxide semiconductor of each of the first interface layer and the second interface layer is higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer.