Wavelength converted semiconductor light emitting device
US8203161B2 · kind B2 · utility
21Cited by
10References
19Claims
0Family size
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Key dates
| Filing date | Nov 23, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Sep 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.