Nitride semiconductor device
US8203172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2010 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Oct 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.