Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
US8203195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Feb 1, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.