Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
US8203421B2 · kind B2 · utility
1Cited by
161References
13Claims
0Family size
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Key dates
| Filing date | Apr 2, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Apr 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/105
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.