Method for resetting time-based CMOS image sensor
US8203639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2008 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Mar 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/772
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of resetting a time-based CMOS image sensor may be provided, where the time-based CMOS image sensor may include a photodiode, a transfer transistor transferring photo-generated charges generated in the photodiode to a floating diffusion node and having a gate to which a ramp signal is input, and a reset transistor resetting the photodiode and the floating diffusion node. The method may include generating photo-generated charges at the photodiode, transferring the photo-generated charges to the floating diffusion node in response to a ramp signal; and resetting a reset electron potential of the photodiode to be higher than a reset electron potential of the floating diffusion node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.