Non-volatile memory devices and programming methods for the same
US8203878B2 · kind B2 · utility
4Cited by
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24Claims
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Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Oct 15, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The non-volatile memory device includes a plurality of memory cells. Each of the memory cells is configured to achieve one of a plurality of states, and each of the states represents different multi-bit data. In one embodiment, the method of programming includes simultaneously programming (1) a first memory cell from a first selected state to a second selected state and (2) a second memory cell from a third selected state to a refined third selected state. The refined third selected state has a higher verify voltage than the third selected state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.