Non-volatile semiconductor storage device
US8203888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2010 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Sep 3, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1048
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor storage device according to one aspect of the present invention includes a plurality of sense amplifier circuit that are configured to carry out a plurality of read cycles on a plurality of bit lines connected to those memory cells that are selected by a selected one of the word lines. During the second and subsequent read cycles, supply of a read current is ceased to those bit lines when it is determined in the preceding read cycle that a current not less than a certain determination current level flows therethrough, and the read current is supplied only to the remaining bit lines. A setup time of the bit lines in the first read cycle is set shorter than a setup time of the bit lines in the second and subsequent read cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.