Resist pattern-forming method and resist pattern miniaturizing resin composition
US8206894B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jul 22, 2010 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Oct 1, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.