Method for manufacturing a resistive switching memory device and devices obtained thereof

US8206995B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Judit Gloria Lisoni Reyes · Oud-Heverlee, BE
• Ludovic Goux · Hannut, BE
• Dirk Wouters · Heverlee, BE

Key dates

• Filing date: Dec 4, 2009
• Grant date: Jun 26, 2012
• Expiry date: Dec 31, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A method for manufacturing a resistive switching memory device comprises providing a substrate comprising an electrical contact, providing on the substrate a dielectric layer comprising a trench exposing the electrical contact, and providing in the trench at least the bottom electrode and the resistive switching element of the resistive memory device. The method may furthermore comprise providing a top electrode at least on or in the trench, in contact with the resistive switching element. The present invention also provides corresponding resistive switching memory devices.