Method of fabricating silicon nanowire solar cell device having upgraded metallurgical grade silicon substrate
US8207013B2 · kind B2 · utility
3Cited by
1References
10Claims
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Key dates
| Filing date | Sep 17, 2010 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Sep 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/888
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A simplified method for fabricating a solar cell device is provided. The solar cell device has silicon nanowires (SiNW) grown on an upgraded metallurgical grade (UMG) silicon (Si) substrate. Processes of textured surface process and anti-reflection thin film process can be left out for further saving costs on equipment and manufacture investment. Thus, a low-cost Si-based solar cell device can be easily fabricated for wide application.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.