Light-emitting device having a thinned structure and the manufacturing method thereof
US8207539B2 · kind B2 · utility
6Cited by
4References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2009 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Jun 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8582
Abstract
A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.