Patent · US Active

Light emitting diode package and method for manufacturing same

US8207549B2 · kind B2 · utility

1Cited by
1References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 21, 2010
Grant dateJun 26, 2012
Priority date
Expiry dateMay 15, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/852
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An exemplary light emitting diode package includes a housing, and a light emitting unit received in the housing. The light emitting unit includes a first carbon nanotube layer, a plurality of spaced light emitting chips, and a second carbon nanotube layer. The light emitting chips are formed on the first carbon nanotube layer. The second carbon nanotube layer covers the light emitting chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.