Surface wave resonator having reduced parasitic resonance
US8207649B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2008 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Dec 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/643
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention relates to a surface acoustic wave resonator produced on a cut substrate with propagation axes for which a nonzero directivity exists and comprising at least one central transducer (Tc) exhibiting a central axis, a first array of reflectors (R1) and a second array of reflectors (R2), said arrays being situated on either side of said transducer, characterized in that the two arrays of reflectors exhibit nonsymmetric configurations with respect to the central axis of said central transducer.The introduction of an asymmetry makes it possible to strongly attenuate the parasitic resonances which may appear when the resonators are produced notably on piezoelectric substrates of quartz type or any other material and cut with propagation axes for which there exists a natural directivity (LiTaO3, LiNbO3, langasite, GaPO4, LiB4O7, KNbO3, etc.).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.