Patent · US Active

Magneto-resistive sensor for measuring a magnetic field based on an anisotropic magneto-resistive (AMR) effect or a gigantic magneto-resistive (GMR) effect

US8207732B2 · kind B2 · utility

4Cited by
3References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 13, 2004
Grant dateJun 26, 2012
Priority date
Expiry dateSep 29, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/09
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Magnetoresistive sensors based on the AMR or GMR effect exhibit substantially enlarged linear characteristic curve regions as a result of the fact that their resistances are composed of magnetoresistive layer strips of differing anisotropic forms. Differing anisotropic forms can be achieved by different strip widths, strip thicknesses, strip intervals or strip materials. The temperature compensation for the output voltage of the magnetoresistive sensors, at least at one point on the characteristic curve, is achieved by the series connection of an additional layer strip with a temperature coefficient that differs from that of the magnetoresistive material to at least one magnetoresistive resistance of the sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.