Magneto-resistive sensor for measuring a magnetic field based on an anisotropic magneto-resistive (AMR) effect or a gigantic magneto-resistive (GMR) effect
US8207732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2004 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Sep 29, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/09
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Magnetoresistive sensors based on the AMR or GMR effect exhibit substantially enlarged linear characteristic curve regions as a result of the fact that their resistances are composed of magnetoresistive layer strips of differing anisotropic forms. Differing anisotropic forms can be achieved by different strip widths, strip thicknesses, strip intervals or strip materials. The temperature compensation for the output voltage of the magnetoresistive sensors, at least at one point on the characteristic curve, is achieved by the series connection of an additional layer strip with a temperature coefficient that differs from that of the magnetoresistive material to at least one magnetoresistive resistance of the sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.