Method and apparatus for MOSFET drain-source leakage reduction
US8207784B2 · kind B2 · utility
3Cited by
53References
22Claims
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Key dates
| Filing date | Feb 12, 2009 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Feb 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0013
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A method and apparatus is taught for reducing drain-source leakage in MOS circuits. In an exemplary CMOS inverter, a first transistor causes the body of an affected transistor to be at a first body potential. A second transistor brings the body potential of the affected transistor to a second body potential by providing an accurate body voltage from a body voltage source. Exemplary body bias voltage sources are further described that can drive one or more gate transistors of different gate circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.