System and method to manufacture magnetic random access memory
US8208290B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2009 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Aug 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method to manufacture magnetic random access memory is disclosed. In a particular embodiment, a method of making a magnetic tunnel junction memory system includes forming a portion of a metal layer into a source line having a substantially rectilinear portion. The method also includes coupling the source line, at the substantially rectilinear portion, to a first transistor using a first via. The first transistor is configured to supply a first current received from the source line to a first magnetic tunnel junction device. The method includes coupling the source line to a second transistor using a second via, where the second transistor is configured to supply a second current received from the source line to a second magnetic tunnel junction device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.