Semiconductor integrated circuit
US8208318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2009 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Jul 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system LSI (100) having a logic circuit (104) and a plurality of SRAM macros (103) includes a power supply circuit (102) configured to receive a voltage (VDDP) supplied from the outside of the system LSI (100), and to generate a stabilized voltage (VDDM) lower than the voltage (VDDP). An SRAM memory cell (103a) of each of the plurality of SRAM macros (103) is supplied with the voltage (VDDM) generated by the power supply circuit (102), and an SRAM logic circuit (103b) of each of the plurality of SRAM macros (103) is supplied with a voltage (VDD) supplied from the outside. In addition, the logic circuit (104) is supplied with the voltage (VDD) from the outside.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.