Patent · US Active

Write timeout control methods for flash memory and memory devices using the same

US8209475B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

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Key dates

Filing dateJun 3, 2010
Grant dateJun 26, 2012
Priority date
Expiry dateJan 19, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2212/7205
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A write timeout control method for a flash memory having a plurality of spare blocks and data blocks including a plurality of mother blocks is disclosed. The method includes the steps of: receiving a write command and a starting logical block address; determining an update mode according to a target mother block linked to the starting logical block address; determining whether a pre-clean operation is performed on a first mother block; if so, performing a post-clean operation on the first mother block during a first time period; re-configuring the first mother block as a spare block; performing a programming process to write data on the target mother block; determining whether the number of mother blocks exceeds a first threshold; and if so, performing the pre-clean operation on a second mother block. The first and second mother blocks are configured as blocks to be cleaned.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.