Method for the removal of doped surface layers on the back faces of crystalline silicon solar wafers

US8211323B2 · kind B2 · utility

Assignees

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US
• Centrotherm Photovoltaics AG · DE

Inventors

• Moritz Heintze · Glückstadt, DE
• Rainer Moeller · Dresden, DE
• Harald Wanka · Reutlingen, DE
• Elena Lopez · Dresden, DE
• Volkmar Hopfe
• Ines Dani · Lichtenau, DE
• Milan Rosina · Grenoble, FR

Key dates

• Filing date: Jun 14, 2006
• Grant date: Jul 3, 2012
• Expiry date: Feb 13, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.