Structures electrically connecting aluminum and copper interconnections and methods of forming the same
US8211793B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2010 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Mar 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.