Semiconductor device and method for manufacturing the same
US8211811B2 · kind B2 · utility
10Cited by
0References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 23, 2009 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Nov 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of an embodiment can prevent nitriding of the lower-layer insulating film and oxygen diffusion from the upper-layer insulating film, so as to minimize the decrease in charge capture density. This semiconductor device includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a nitrogen-added amorphous silicon layer formed on the first insulating film, a first silicon nitride layer formed on the amorphous silicon layer, and a second insulating film formed above the first silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.