Patent · US Active

Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device

US8211993B2 · kind B2 · utility

2Cited by
9References
13Claims
0Family size

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Key dates

Filing dateOct 23, 2006
Grant dateJul 3, 2012
Priority date
Expiry dateJun 20, 2028

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C2222/20
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method of manufacturing an inorganic substrate coated with a thin silica type glass layer of 2H to 9H pencil hardness, said method comprising the steps of: coating an inorganic substrate with a cyclic dihydrogenpolysiloxane and/or a hydrogenpolysiloxane represented by a specific unit formula, and curing it; an inorganic substrate coated with a thin silica type glass layer; a coating agent for an inorganic substrate that is composed of a cyclic dihydrogenpolysiloxane and/or a hydrogenpolysiloxane represented by a specific unit formula; and a semiconductor device having an inorganic substrate coated with a thin silica type glass layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.