Patent · US Active

TEM grids for determination of structure-property relationships in nanotechnology

US8212225B2 · kind B2 · utility

3Cited by
7References
31Claims
0Family size

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Key dates

Filing dateMay 19, 2008
Grant dateJul 3, 2012
Priority date
Expiry dateNov 7, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24331
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Silicon grids with electron-transparent SiO2 windows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiO2 surfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Structural or chemical functionalizations can be provided, and surface interactions observed via TEM.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.