N-type doping in metal oxides and metal chalcogenides by electrochemical methods
US8212246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2009 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Aug 10, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D5/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.