Reverse-conducting semiconductor device
US8212283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2010 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Nov 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
Abstract
A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of the wafer forms a base layer with a base layer thickness. A first layer of a first conductivity type with at least one first region and a second layer of a second conductivity type with at least one second and third region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The RC-IGBT can be configured such that the following exemplary geometrical rules are fulfilled: each third region area is an area, in which any two first regions have a distance bigger (i.e., larger) than two times the base layer thickness; the at least one second region is that part of the second layer, which is not the at least one third region; the at least one third region is arranged in the central part of the active region in such a way that there is a minimum distance between the third region border to the active region border of at least once the base layer thickness; the sum of the areas of the at least one third region is between 10 a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.