Methods of making quantum dot films
US8213212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an example embodiment, an optical device includes an integrated circuit, an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region. In another example embodiment, a method of forming a nanocrystalline film includes fabricating nanocrystals having a plurality of first ligands attached to their outer surfaces, exchanging the first ligands for second ligands of a different chemical composition, forming a film of the ligand-exchanged nanocrystals, removing the second ligands, and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. In another example embodiment, a film includes a network of fused nanocrystals with at least portions of the fused nanocrystals being in direct physical contact with adjacent nanocrystals, the film having substantially no defect states in regions where cores of the nanocrystals are fused.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.